At present, TYSiC has successfully completed research and development of p-type epitaxial layer. It is able to provide customers with p-type epitaxial wafer and p-type epitaxial growth technique.
Dopant :Al
Doping concentration: 5E15~1E19cm-3 Tolerance: ±15% Uniformity:10%.
Thickness:0.5~5um Tolerance: ±10% Uniformity:3%.
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